 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Schottky Barrier Diodes (SBD) MA3X716 Silicon epitaxial planar type For switching circuits For wave detection circuit I Features * Two MA3X704As are contained in one package (series connection) * Optimum for low-voltage rectification because of its low forward rise voltage (VF) * Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.9 - 0.05 + 0.2 2.8 - 0.3 0.65 0.15 1.5 + 0.25 - 0.05 + 0.2 Unit : mm 0.65 0.15 0.95 1.9 0.2 1 3 2 0.95 1.45 0 to 0.1 1.1 - 0.1 0.1 to 0.3 0.4 0.2 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Peak forward current Forward current (DC) Junction temperature Storage temperature Single Series Single Series Tj Tstg IF Symbol VR IFM Rating 30 150 110 30 20 125 -55 to +125 C C mA Unit V mA 0.8 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 JEDEC : TO-236 Anode 2 EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M1U Internal Connection 1 3 2 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Vin = 3 V(peak), f = 30 MHz RL = 3.9 k, CL = 10 pF 1.5 1.0 Conditions Min Typ Max 1 0.4 1.0 Unit A V V pF ns Detection efficiency 65 0.16 - 0.06 + 0.2 + 0.1 0.4 - 0.05 + 0.1 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse tp 10% Output Pulse tr t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 1 MA3X716 IF V F 103 1.0 Schottky Barrier Diodes (SBD) VF Ta 103 IR VR 102 75C 25C Ta = 125C - 20C Forward current IF (mA) 0.8 102 IF = 30 mA 10 Forward voltage VF (V) Reverse current IR (A) Ta = 125C 0.6 10 75C 1 0.4 3 mA 0.2 1 mA 1 25C 10-1 10-1 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 0 -40 10-2 0 40 80 120 160 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) Ct VR 2.4 f = 1 MHz Ta = 25C IR T a 103 Terminal capacitance Ct (pF) 2.0 102 1.6 Reverse current IR (A) VR = 30 V 15 V 10 1.2 1 0.8 0.4 10-1 0 0 5 10 15 20 25 30 10-2 -40 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (C) 2 |
Price & Availability of MA3X716
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |